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ALD processes have been successfully demonstrated for many metal compounds, but for only very few pure metals.. (tert-butylimido)-bis(dimethylamido)tungsten, (tBuN)2(Me2N)2W, and ammonia at low.
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In-situ As decapping in FlexAL ALD • Grow amorphous As-cap on InGaAs at the end of MBE growth => surface is protected from environment (ideal surface => minimal Dit?). • As- cap removed by exposure to low power H* plasma (2W) as AsH3. Cycle (2W H* plasma for 5s)/(SE measurement for 4s) until interface reached.
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Doses averaged 15 and 20 min for tungsten hexafluoride (WF6) in order to take advantage of the less (tBuN)2(Me2N)2W and ammonia, respectively, and purges were per- corrosive ALD precursors of WN and to avoid the formation of hydrogen formed for 45 min. fluoride as a byproduct, which may etch the substrate.
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ALD has gained increasing popularity over the last few decades because of its ability to deposit ultra-thin uniform films with precise thickness control and its low temperature growth possibility. These merits of ALD are particularly valuable for the application of WO 3 thin films for solar cells and 2D-TMD synthesis. However, there are only a.
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Therefore, ALD technique seems a method of choice to deposit graphene as it allows a control of the thickness at the atomic scale and it needs lower deposition temperature (< 600 °C). The first and only work on ALD of graphene, published in 2014 by Zhang et al.,45 reports Remote Plasma-Enhanced ALD (PEALD) using sequential pulses of benzene.
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In this work, we have developed and characterized a new plasma-enhanced ALD process for WO3 thin films using the metalorganic precursor (tBuN)2(Me2N)2W and O2 plasma as co-reactant over a wide temperature range of 100 °C-400 °C. The influence of deposition temperature on the growth behaviour and film properties is investigated in detail.
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Here we report for the first time the ALD-enabled atomic-layer-precision development of a single layer WO3 with thickness of 0.7 ± 0.07 nm across a large area by using (tBuN)2W(NMe2)2 as tungsten.
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ALD is often employed when deposition of uniform and surface conform thin films are required 4,37,38,39,40.. 2w and o2 plasma. J. Vac. Sci. Technol. A 36, 01B103 (2018). Google Scholar
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Recently, area-selective atomic layer deposition (AS-ALD) has attracted much attention as a promising alternative pathway to realize selective growth of materials on predetermined locations. 20,21 AS-ALD is an advanced atomic layer deposition (ALD) process that limits growth to predetermined areas by taking advantage of the surface chemistry differences between the growth and non-growth areas.
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The growth of tungsten oxide (WO 3) thin films by atomic layer deposition (ALD) offers numerous merits including atomic-scale thickness control at low deposition temperatures. In this work, the authors have developed and characterized a new plasma-enhanced ALD process for WO 3 thin films using the metalorganic precursor bis.
